Avalanche Energy Rating (Eas) 554 mJ
Pulsed Drain Current-Max (IDM) 700A
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 173A
Turn-Off Delay Time 82 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Current - Continuous Drain (Id) @ 25°C 173A Tc
Input Capacitance (Ciss) (Max) @ Vds 7020pF @ 25V
Vgs(th) (Max) @ Id 3.7V @ 150μA
Rds On (Max) @ Id, Vgs 3.3m Ω @ 100A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 230W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HEXFET?, StrongIRFET?
Operating Temperature -55°C~175°C TJ