IRFSL4229PBF
RoHS
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Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 250V 45A TO-262
PDF
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Buying Options
Total Price: USD $9.43
Unit Price: USD $9.4278
≥1 USD $9.4278
≥10 USD $7.73585
≥100 USD $7.4936
≥500 USD $7.2523
≥1000 USD $7.01005
Inventory: 1080
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Width 4.826mm
Length 10.668mm
Height 9.65mm
Technical
Rds On Max 48 mΩ
Drain to Source Resistance 48mOhm
Input Capacitance 4.56nF
Drain to Source Breakdown Voltage 250V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 45A
Turn-Off Delay Time 30 ns
Fall Time (Typ) 21 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 250V
Rise Time 31ns
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Current - Continuous Drain (Id) @ 25°C 45A Tc
Input Capacitance (Ciss) (Max) @ Vds 4560pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 48mOhm @ 26A, 10V
FET Type N-Channel
Turn On Delay Time 18 ns
Power Dissipation 330W
Element Configuration Single
Power Dissipation-Max 330W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -40°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2010
Packaging Tube
Operating Temperature -40°C~175°C TJ
Physical
Supplier Device Package TO-262
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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