IRFSL3004PBF
RoHS
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Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 195A TO262
PDF
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Buying Options
Total Price: USD $1.27
Unit Price: USD $1.2654
≥1 USD $1.2654
≥10 USD $1.03835
≥100 USD $1.00605
≥500 USD $0.97375
≥1000 USD $0.94145
Inventory: 1323
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 380W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 380W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.75m Ω @ 195A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Ta
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 220ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 130 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 340A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Dimensions
Height 9.65mm
Length 10.67mm
Width 4.83mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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