DS Breakdown Voltage-Min 75V
Drain-source On Resistance-Max 0.00305Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 197A
Turn-Off Delay Time 123 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 75V
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Current - Continuous Drain (Id) @ 25°C 197A Tc
Input Capacitance (Ciss) (Max) @ Vds 10130pF @ 25V
Vgs(th) (Max) @ Id 3.7V @ 150μA
Rds On (Max) @ Id, Vgs 3.05m Ω @ 100A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 294W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HEXFET?, StrongIRFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ