Drain to Source Resistance 2.4mOhm
Input Capacitance 10.034nF
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 3.7V
Continuous Drain Current (ID) 195A
Turn-Off Delay Time 118 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 279nC @ 10V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Input Capacitance (Ciss) (Max) @ Vds 10034pF @ 25V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Power Dissipation-Max 294W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HEXFET?, StrongIRFET?
Operating Temperature -55°C~175°C TJ