Operating Temperature -55°C~175°C TJ
Series HEXFET?, StrongIRFET?
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 290W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 140 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.95m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9990pF @ 25V
Current - Continuous Drain (Id) @ 25°C 240A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Turn-Off Delay Time 195 ns
Continuous Drain Current (ID) 240A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V