IRFS7437PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N CH 40V 195A D2PAK
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Buying Options
Total Price: USD $1.38
Unit Price: USD $1.3832
≥1 USD $1.3832
≥10 USD $1.13525
≥100 USD $1.09915
≥500 USD $1.064
≥1000 USD $1.02885
Inventory: 1186
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 9.65mm
Length 10.67mm
Height 4.83mm
Technical
Nominal Vgs 3 V
Recovery Time 30 ns
Avalanche Energy Rating (Eas) 802 mJ
DS Breakdown Voltage-Min 40V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 3V
Continuous Drain Current (ID) 195A
Turn-Off Delay Time 78 ns
Fall Time (Typ) 53 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 40V
Rise Time 70 ns
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Input Capacitance (Ciss) (Max) @ Vds 7330pF @ 25V
Vgs(th) (Max) @ Id 3.9V @ 150μA
Rds On (Max) @ Id, Vgs 1.8m Ω @ 100A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 19 ns
Case Connection DRAIN
Power Dissipation 230W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 230W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
Series HEXFET?, StrongIRFET?
Published 2007
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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