Avalanche Energy Rating (Eas) 470 mJ
Pulsed Drain Current-Max (IDM) 240A
Drain to Source Breakdown Voltage 150V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 60A
Turn-Off Delay Time 28 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V
Current - Continuous Drain (Id) @ 25°C 51A Tc
Input Capacitance (Ciss) (Max) @ Vds 2770pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 32m Ω @ 36A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.8W Ta 230W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ