Pulsed Drain Current-Max (IDM) 290A
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 73A
Turn-Off Delay Time 53 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Current - Continuous Drain (Id) @ 25°C 73A Tc
Input Capacitance (Ciss) (Max) @ Vds 3550pF @ 50V
Vgs(th) (Max) @ Id 4V @ 100μA
Rds On (Max) @ Id, Vgs 14m Ω @ 44A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 190W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ