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IRFS4610TRLPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 73A D2PAK
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Buying Options
Total Price: USD $2.52
Unit Price: USD $2.5168
≥1 USD $2.5168
≥10 USD $2.09176
≥100 USD $1.664696
Inventory: 1764
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 9.65mm
Length 10.668mm
Height 4.826mm

Technical

Pulsed Drain Current-Max (IDM) 290A
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 4V
Continuous Drain Current (ID) 73A
Turn-Off Delay Time 53 ns
Fall Time (Typ) 70 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 87 ns
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Current - Continuous Drain (Id) @ 25°C 73A Tc
Input Capacitance (Ciss) (Max) @ Vds 3550pF @ 50V
Vgs(th) (Max) @ Id 4V @ 100μA
Rds On (Max) @ Id, Vgs 14m Ω @ 44A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 18 ns
Case Connection DRAIN
Power Dissipation 190W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 190W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Resistance 14MOhm
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series HEXFET?
Published 2004
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin

Supply Chain

Factory Lead Time 12 Weeks

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