IRFS41N15DPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 41A D2PAK
PDF
/
Buying Options
Total Price: USD $0.97
Unit Price: USD $0.96805
≥1 USD $0.96805
≥10 USD $0.7942
≥100 USD $0.7695
≥500 USD $0.7448
≥1000 USD $0.7201
Inventory: 63689
Minimum: 1
-
+
Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 470 mJ
DS Breakdown Voltage-Min 150V
Pulsed Drain Current-Max (IDM) 164A
Drain-source On Resistance-Max 0.045Ohm
Drain Current-Max (Abs) (ID) 41A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 150V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Current - Continuous Drain (Id) @ 25°C 41A Tc
Input Capacitance (Ciss) (Max) @ Vds 2520pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Rds On (Max) @ Id, Vgs 45m Ω @ 25A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.1W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
JESD-609 Code e3
Series HEXFET?
Published 2003
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Alternative Model
Recommended For You
IRFS41N15DPBF+price,IRFS41N15DPBF+datasheet,IRFS41N15DPBF+in stock,buy+IRFS41N15DPBF,finder+IRFS41N15DPBF,IRFS41N15DPBF+tutorials,IRFS41N15DPBF+download