IRFS3806TRLPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 43A D2PAK
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Buying Options
Total Price: USD $1.03
Unit Price: USD $1.03213
≥1 USD $1.03213
≥10 USD $0.879077
≥100 USD $0.796663
≥500 USD $0.671081
≥1000 USD $1.19795
Inventory: 158
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 71W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 71W
Case Connection DRAIN
Turn On Delay Time 6.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 50V
Current - Continuous Drain (Id) @ 25°C 43A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 47 ns
Turn-Off Delay Time 49 ns
Continuous Drain Current (ID) 43A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Dimensions
Height 4.826mm
Length 10.668mm
Width 9.65mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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