Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0079Ohm
Pulsed Drain Current-Max (IDM) 280A
DS Breakdown Voltage-Min 60V
Continuous Drain Current (ID) 56A
Turn-Off Delay Time 36 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 25V
Vgs(th) (Max) @ Id 3.7V @ 100μA
Rds On (Max) @ Id, Vgs 7.9m Ω @ 43A, 10V
Transistor Application SWITCHING
Turn On Delay Time 8.1 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 99W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ