Drain to Source Breakdown Voltage 20V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 93A
Turn-Off Delay Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Current - Continuous Drain (Id) @ 25┬?C 93A Tc
Input Capacitance (Ciss) (Max) @ Vds 2160pF @ 10V
Vgs(th) (Max) @ Id 2.45V @ 250╬╝A
Rds On (Max) @ Id, Vgs 5.7m ╬? @ 15A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 79W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55┬?C~175┬?C TJ