Max Junction Temperature (Tj) 175°C
Pulsed Drain Current-Max (IDM) 244A
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 61A
Turn-Off Delay Time 17.6 ns
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 61A Tc
Input Capacitance (Ciss) (Max) @ Vds 2417pF @ 15V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 12.5m Ω @ 15A, 10V
Transistor Application SWITCHING
Turn On Delay Time 7.2 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 87W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ