Avalanche Energy Rating (Eas) 42 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 220A
Drain-source On Resistance-Max 0.0095Ohm
Drain Current-Max (Abs) (ID) 30A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V
Vgs(th) (Max) @ Id 2.25V @ 25μA
Rds On (Max) @ Id, Vgs 9.5m Ω @ 15A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 50W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish MATTE TIN OVER NICKEL
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ