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IRFR3410TRRPBF

Infineon Technologies
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 31A DPAK
PDF
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Buying Options
Total Price: USD $0.72
Unit Price: USD $0.71915
≥1 USD $0.71915
≥10 USD $0.58995
≥100 USD $0.5719
≥500 USD $0.55385
≥1000 USD $0.53485
Inventory: 1080
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3W Ta 110W Tc
Element Configuration Single
Power Dissipation 110W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 39mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1690pF @ 25V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 31A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Input Capacitance 1.69nF
Drain to Source Resistance 39mOhm
Rds On Max 39 mΩ

Dimensions

Height 2.3876mm
Length 6.7056mm
Width 6.22mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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