IRFPS3810
RoHS
/
Package TO-274AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 170A SUPER247
PDF
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Buying Options
Total Price: USD $3.25
Unit Price: USD $3.246429
≥1 USD $3.246429
≥10 USD $3.062667
≥100 USD $2.889309
≥500 USD $2.725762
≥1000 USD $2.571481
Inventory: 987
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 1350 mJ
DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 670A
Drain-source On Resistance-Max 0.009Ohm
Drain Current-Max (Abs) (ID) 105A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 390nC @ 10V
Current - Continuous Drain (Id) @ 25°C 170A Tc
Input Capacitance (Ciss) (Max) @ Vds 6790pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 9m Ω @ 100A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 580W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2002
Packaging Bulk
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-274AA
Mounting Type Through Hole
Alternative Model
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