Max Junction Temperature (Tj) 175°C
Avalanche Energy Rating (Eas) 760 mJ
Pulsed Drain Current-Max (IDM) 520A
Drain to Source Breakdown Voltage 200V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 130A
Turn-Off Delay Time 64 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 241nC @ 10V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Input Capacitance (Ciss) (Max) @ Vds 10720pF @ 50V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 9.7m Ω @ 81A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 520W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 250
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ