Drain to Source Resistance 15.5mOhm
Drain to Source Breakdown Voltage 150V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 78A
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 150V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Current - Continuous Drain (Id) @ 25°C 78A Tc
Input Capacitance (Ciss) (Max) @ Vds 4460pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 15.5mOhm @ 33A, 10V
Element Configuration Single
Power Dissipation-Max 310W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ