Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 90A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 210A
Turn-Off Delay Time 53 ns
Drive Voltage (Max Rds On,Min Rds On) 7V 10V
Gate Charge (Qg) (Max) @ Vgs 209nC @ 10V
Current - Continuous Drain (Id) @ 25°C 210A Tc
Input Capacitance (Ciss) (Max) @ Vds 8250pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 2.8m Ω @ 76A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.8W Ta 230W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ