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RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 75V 209A TO247AC
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Buying Options
Total Price: USD $3.73
Unit Price: USD $3.7335
≥1 USD $3.7335
≥10 USD $3.0628
≥100 USD $2.9678
≥500 USD $2.87185
≥1000 USD $2.7759
Inventory: 39720
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 4.5MOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 75V
Technology MOSFET (Metal Oxide)
Current Rating 209A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 470W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 470W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 125A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 209A Tc
Gate Charge (Qg) (Max) @ Vgs 620nC @ 10V
Rise Time 190 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 130 ns
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) 209A
Threshold Voltage 4V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 90A
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 840A
Dual Supply Voltage 75V
Recovery Time 210 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs 4 V

Dimensions

Height 24.99mm
Length 15.87mm
Width 5.3086mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

Alternative Model

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