IRFP054N
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 81A TO-247AC
PDF
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Buying Options
Total Price: USD $1.91
Unit Price: USD $1.90855
≥1 USD $1.90855
≥10 USD $1.5656
≥100 USD $1.51715
≥500 USD $1.46775
≥1000 USD $1.4193
Inventory: 8002
Minimum: 1
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 1997
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, FAST SWITCHING
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 170W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 43A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 81A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-247AC
Drain Current-Max (Abs) (ID) 81A
Drain-source On Resistance-Max 0.012Ohm
Pulsed Drain Current-Max (IDM) 290A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 360 mJ
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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