Pulsed Drain Current-Max (IDM) 24A
Drain to Source Breakdown Voltage 25V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 5.8A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.8A Ta
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 10V
Vgs(th) (Max) @ Id 2.35V @ 10μA
Rds On (Max) @ Id, Vgs 24m Ω @ 5.8A, 10V
Transistor Application SWITCHING
Turn On Delay Time 2.7 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.25W Ta
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ