IRFL4315
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 2.6A SOT223
PDF
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Buying Options
Total Price: USD $0.54
Unit Price: USD $0.5377
≥1 USD $0.5377
≥10 USD $0.4408
≥100 USD $0.4275
≥500 USD $0.41325
≥1000 USD $0.39995
Inventory: 105005
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 38 mJ
DS Breakdown Voltage-Min 150V
Pulsed Drain Current-Max (IDM) 21A
Drain-source On Resistance-Max 0.185Ohm
Drain Current-Max (Abs) (ID) 2.6A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 150V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.6A Ta
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 185m Ω @ 1.6A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.8W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G4
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Series HEXFET?
Published 1999
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Alternative Model
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