IRFL4310TR
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 1.6A SOT223
PDF
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Buying Options
Total Price: USD $0.31
Unit Price: USD $0.30875
≥1 USD $0.30875
≥10 USD $0.25365
≥100 USD $0.24605
≥500 USD $0.2375
≥1000 USD $0.2299
Inventory: 263227
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Power Dissipation-Max (Abs) 1W
DS Breakdown Voltage-Min 100V
Drain-source On Resistance-Max 0.2Ohm
Drain Current-Max (Abs) (ID) 1.6A
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 200m Ω @ 1.6A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G4
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature HIGH RELIABILITY
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series HEXFET?
Published 1999
Packaging Cut Tape (CT)
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Alternative Model
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