Drain to Source Breakdown Voltage 55V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 5.1A
Turn-Off Delay Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.1A Ta
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 57.5m Ω @ 3.1A, 10V
Transistor Application SWITCHING
Turn On Delay Time 7.8 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Ta
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ