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Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 5.1A SOT223
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Buying Options
Total Price: USD $0.43
Unit Price: USD $0.4312
≥1 USD $0.4312
≥10 USD $0.37312
≥100 USD $0.258368
≥500 USD $0.215899
≥1000 USD $0.20218
Inventory: 100688
Minimum: 1
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Technical Details

Compliance

Lead Free Contains Lead, Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 3.7mm
Length 6.6802mm
Height 1.4478mm

Technical

Nominal Vgs 4 V
Dual Supply Voltage 55V
Drain to Source Breakdown Voltage 55V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 4V
Continuous Drain Current (ID) 5.1A
Turn-Off Delay Time 30 ns
Fall Time (Typ) 23 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 21 ns
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.1A Ta
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 57.5m Ω @ 3.1A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 7.8 ns
Case Connection DRAIN
Power Dissipation 2.8W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Ta
Number of Elements 1
JESD-30 Code R-PDSO-G4
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 1A
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 55V
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Terminal Finish Matte Tin (Sn)
Resistance 57.5MOhm
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series HEXFET?
Published 2010
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 12 Weeks

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