IRFL024NTR
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 2.8A SOT223
PDF
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Buying Options
Total Price: USD $0.33
Unit Price: USD $0.3325
≥1 USD $0.3325
≥10 USD $0.27265
≥100 USD $0.2641
≥500 USD $0.25555
≥1000 USD $0.247
Inventory: 15843
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
DS Breakdown Voltage-Min 55V
Drain-source On Resistance-Max 0.075Ohm
Drain Current-Max (Abs) (ID) 2.8A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 55V
Gate Charge (Qg) (Max) @ Vgs 18.3nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.8A Ta
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 75m Ω @ 2.8A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 1999
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Alternative Model
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