Drain to Source Breakdown Voltage 55V
Drain Current-Max (Abs) (ID) 2.7A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.9A
Turn-Off Delay Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1.9A Ta
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 160m Ω @ 1.9A, 10V
Transistor Application SWITCHING
Turn On Delay Time 6.6 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Ta
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ