Operating Temperature -55°C~175°C TJ
Series HEXFET?, StrongIRFET?
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 42W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 57A, 10V
Vgs(th) (Max) @ Id 3.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4549pF @ 25V
Current - Continuous Drain (Id) @ 25°C 95A Tc
Gate Charge (Qg) (Max) @ Vgs 132nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 95A
Drain-source On Resistance-Max 0.0025Ohm
Pulsed Drain Current-Max (IDM) 380A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 407 mJ