Pulsed Drain Current-Max (IDM) 170A
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 43A
Turn-Off Delay Time 43 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Current - Continuous Drain (Id) @ 25°C 43A Tc
Input Capacitance (Ciss) (Max) @ Vds 4910pF @ 50V
Vgs(th) (Max) @ Id 4V @ 150μA
Rds On (Max) @ Id, Vgs 9.3m Ω @ 26A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 47W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ