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IRFI4410ZPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB FullPak package
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Buying Options
Total Price: USD $2.07
Unit Price: USD $2.07385
≥1 USD $2.07385
≥10 USD $1.7024
≥100 USD $1.6492
≥500 USD $1.596
≥1000 USD $1.5428
Inventory: 1188
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC

Dimensions

Width 4.826mm
Length 10.7442mm
Height 9.8044mm

Technical

Pulsed Drain Current-Max (IDM) 170A
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Threshold Voltage 4V
Continuous Drain Current (ID) 43A
Turn-Off Delay Time 43 ns
Fall Time (Typ) 30 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 27 ns
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Current - Continuous Drain (Id) @ 25°C 43A Tc
Input Capacitance (Ciss) (Max) @ Vds 4910pF @ 50V
Vgs(th) (Max) @ Id 4V @ 150μA
Rds On (Max) @ Id, Vgs 9.3m Ω @ 26A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 15 ns
Case Connection ISOLATED
Power Dissipation 47W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 47W Tc
Number of Elements 1
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HEXFET?
Published 2008
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 12 Weeks

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