IRFI4410ZGPBF
RoHS
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Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 43A TO220AB
PDF
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Buying Options
Total Price: USD $3.12
Unit Price: USD $3.11695
≥1 USD $3.11695
≥10 USD $2.5574
≥100 USD $2.4776
≥500 USD $2.3978
≥1000 USD $2.318
Inventory: 1133
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Rds On Max 9.3 mΩ
Input Capacitance 4.91nF
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 43A
Turn-Off Delay Time 27 ns
Fall Time (Typ) 43 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Rise Time 15ns
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Current - Continuous Drain (Id) @ 25°C 43A Tc
Input Capacitance (Ciss) (Max) @ Vds 4910pF @ 50V
Vgs(th) (Max) @ Id 4V @ 150μA
Rds On (Max) @ Id, Vgs 9.3mOhm @ 26A, 10V
FET Type N-Channel
Turn On Delay Time 23 ns
Power Dissipation 47W
Power Dissipation-Max 47W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2011
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Supplier Device Package TO-220AB Full-Pak
Number of Pins 3
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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