IRFI4227PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 26A TO-220FP
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Buying Options
Total Price: USD $2.68
Unit Price: USD $2.684
≥1 USD $2.684
≥10 USD $2.13048
≥100 USD $1.826088
≥500 USD $1.62316
≥1000 USD $1.389837
≥3000 USD $1.308674
Inventory: 5159
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2007
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 46W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 46W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 19 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 29 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 26A
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 100A
Avalanche Energy Rating (Eas) 54 mJ
Dimensions
Height 9.8044mm
Length 10.6172mm
Width 4.826mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Alternative Model
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