IRFI4110GPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 72A TO220AB
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Buying Options
Total Price: USD $2.38
Unit Price: USD $2.376
≥1 USD $2.376
≥10 USD $1.88584
≥100 USD $1.616472
≥500 USD $1.581026
Inventory: 6015
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.83mm
Length 10.75mm
Height 16.13mm
Technical
Nominal Vgs 4 V
Pulsed Drain Current-Max (IDM) 290A
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 4V
Continuous Drain Current (ID) 72A
Turn-Off Delay Time 81 ns
Fall Time (Typ) 71 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 58 ns
Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
Current - Continuous Drain (Id) @ 25°C 72A Tc
Input Capacitance (Ciss) (Max) @ Vds 9540pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 4.5m Ω @ 43A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 24 ns
Case Connection ISOLATED
Power Dissipation 61W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 61W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Resistance 4.5MOhm
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HEXFET?
Published 2008
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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