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IRFHS8342TR2PBF

Infineon Technologies
RoHS
/
Package 6-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description HEXFET? Digi-Reel? Surface Mount N-Channel Mosfet Transistor 8.8A Ta 19A Tc 8.8A 2.1W 5ns
PDF
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Buying Options
Total Price: USD $1.6
Unit Price: USD $1.6036
≥1 USD $1.6036
≥10 USD $1.31575
≥100 USD $1.2749
≥500 USD $1.23405
≥1000 USD $1.19225
Inventory: 32504
Minimum: 1
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Technical Details

Compliance

RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 2.1mm
Length 2.1mm
Height 950μm

Technical

Nominal Vgs 1.8 V
Rds On Max 16 mΩ
Drain to Source Resistance 16mOhm
Recovery Time 17 ns
Input Capacitance 600pF
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1.8V
Continuous Drain Current (ID) 8.8A
Turn-Off Delay Time 5.2 ns
Fall Time (Typ) 5 ns
Drain to Source Voltage (Vdss) 30V
Rise Time 15ns
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8.8A Ta 19A Tc
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Rds On (Max) @ Id, Vgs 16mOhm @ 8.5A, 10V
FET Type N-Channel
Turn On Delay Time 5.9 ns
Power Dissipation 2.1W
Element Configuration Single
Number of Elements 1
Technology MOSFET (Metal Oxide)
Max Power Dissipation 2.1W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2010
Packaging Digi-Reel?

Physical

Supplier Device Package PG-TSDSON-6
Number of Pins 6
Package / Case 6-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount

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