Drain to Source Resistance 16mOhm
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 8.8A
Turn-Off Delay Time 5.2 ns
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8.8A Ta 19A Tc
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Rds On (Max) @ Id, Vgs 16mOhm @ 8.5A, 10V
Turn On Delay Time 5.9 ns
Element Configuration Single
Technology MOSFET (Metal Oxide)
Max Power Dissipation 2.1W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)