IRFHS8242TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage 6-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 9.9A PQFN
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Buying Options
Total Price: USD $0.48
Unit Price: USD $0.4752
≥1 USD $0.4752
≥10 USD $0.4092
≥100 USD $0.28424
≥500 USD $0.221918
≥1000 USD $0.180382
≥3000 USD $0.161251
Inventory: 1132
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-PowerVDFN
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 13MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 2.1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
Turn On Delay Time 6.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 653pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9.9A Ta 21A Tc
Gate Charge (Qg) (Max) @ Vgs 10.4nC @ 10V
Rise Time 19 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.3 ns
Turn-Off Delay Time 5.4 ns
Continuous Drain Current (ID) 9.9A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8.5A
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 84A
Nominal Vgs 1.8 V
Dimensions
Height 950μm
Length 2.1mm
Width 2.1mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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