IRFHS8242TR2PBF
RoHS
/
Package 6-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 9.9A PQFN
PDF
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Buying Options
Total Price: USD $0.25
Unit Price: USD $0.2489
≥1 USD $0.2489
≥10 USD $0.20425
≥100 USD $0.19855
≥500 USD $0.1919
≥1000 USD $0.18525
Inventory: 24303
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-PowerVDFN
Number of Pins 6
Supplier Device Package 6-PQFN (2x2)
Technical
Packaging Cut Tape (CT)
Published 2013
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2.1W
Technology MOSFET (Metal Oxide)
Element Configuration Single
Power Dissipation 2.1W
Turn On Delay Time 6.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 653pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9.9A Ta 21A Tc
Gate Charge (Qg) (Max) @ Vgs 10.4nC @ 10V
Rise Time 19ns
Drain to Source Voltage (Vdss) 25V
Fall Time (Typ) 5.3 ns
Turn-Off Delay Time 5.4 ns
Continuous Drain Current (ID) 9.9A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Input Capacitance 653pF
Recovery Time 17 ns
Drain to Source Resistance 13mOhm
Rds On Max 13 mΩ
Nominal Vgs 1.8 V
Dimensions
Height 950μm
Length 2.1mm
Width 2.1mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
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