Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 76 mJ
Pulsed Drain Current-Max (IDM) 90A
Drain to Source Breakdown Voltage -30V
Drain Current-Max (Abs) (ID) 24A
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) -11A
Turn-Off Delay Time 72 ns
Drive Voltage (Max Rds On,Min Rds On) 10V 20V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Ta 24A Tc
Input Capacitance (Ciss) (Max) @ Vds 1543pF @ 25V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Rds On (Max) @ Id, Vgs 10m Ω @ 11A, 20V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.8W Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ