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IRFHM9331TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 11A 8-PQFN
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Buying Options
Total Price: USD $0.7
Unit Price: USD $0.704
≥1 USD $0.704
≥10 USD $0.60808
≥100 USD $0.420728
≥500 USD $0.35156
≥1000 USD $0.299209
≥3000 USD $0.266482
Inventory: 35048
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 2.9972mm
Length 2.9972mm
Height 1mm

Technical

Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 76 mJ
Pulsed Drain Current-Max (IDM) 90A
Drain to Source Breakdown Voltage -30V
Drain Current-Max (Abs) (ID) 24A
Gate to Source Voltage (Vgs) 25V
Threshold Voltage -1.8V
Continuous Drain Current (ID) -11A
Turn-Off Delay Time 72 ns
Fall Time (Typ) 60 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V 20V
Drain to Source Voltage (Vdss) 30V
Rise Time 27 ns
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Ta 24A Tc
Input Capacitance (Ciss) (Max) @ Vds 1543pF @ 25V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Rds On (Max) @ Id, Vgs 10m Ω @ 11A, 20V
Transistor Application SWITCHING
FET Type P-Channel
Turn On Delay Time 11 ns
Case Connection DRAIN
Power Dissipation 2.8W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.8W Ta
Number of Channels 1
Number of Elements 1
JESD-30 Code S-PDSO-N5
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Matte Tin (Sn)
Resistance 14.6MOhm
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series HEXFET?
Published 2009
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 12 Weeks

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