IRFHM9331TR2PBF
RoHS
/
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 30V 11A 3X3 PQFN
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 2.9972mm
Length 2.9972mm
Height 939.8μm
Technical
Nominal Vgs -1.8 V
Rds On Max 10 mΩ
Drain to Source Resistance 14.6mOhm
Recovery Time 96 ns
Input Capacitance 1.543nF
Drain to Source Breakdown Voltage -30V
Gate to Source Voltage (Vgs) 25V
Threshold Voltage -1.8V
Continuous Drain Current (ID) -11A
Turn-Off Delay Time 72 ns
Fall Time (Typ) 60 ns
Drain to Source Voltage (Vdss) 30V
Rise Time 27ns
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Ta 24A Tc
Input Capacitance (Ciss) (Max) @ Vds 1543pF @ 25V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Rds On (Max) @ Id, Vgs 10mOhm @ 11A, 20V
FET Type P-Channel
Turn On Delay Time 11 ns
Power Dissipation 2.8W
Element Configuration Single
Number of Elements 1
Technology MOSFET (Metal Oxide)
Max Power Dissipation 2.8W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2011
Packaging Cut Tape (CT)
Physical
Supplier Device Package PQFN (3x3)
Number of Pins 8
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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