Avalanche Energy Rating (Eas) 35 mJ
DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 0.009Ohm
Drain Current-Max (Abs) (ID) 25A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 13A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Current - Continuous Drain (Id) @ 25°C 13A Ta
Input Capacitance (Ciss) (Max) @ Vds 1180pF @ 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Rds On (Max) @ Id, Vgs 9m Ω @ 20A, 10V
Transistor Application SWITCHING
Turn On Delay Time 8.3 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.7W Ta 28W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ