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IRFHM8334TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 13A 8PQFN
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Buying Options
Total Price: USD $0.35
Unit Price: USD $0.34865
≥1 USD $0.34865
≥10 USD $0.2869
≥100 USD $0.2774
≥500 USD $0.26885
≥1000 USD $0.25935
Inventory: 1173
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Technical

Avalanche Energy Rating (Eas) 35 mJ
DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 0.009Ohm
Drain Current-Max (Abs) (ID) 25A
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1.8V
Continuous Drain Current (ID) 13A
Turn-Off Delay Time 7 ns
Fall Time (Typ) 4.6 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Rise Time 14 ns
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Current - Continuous Drain (Id) @ 25°C 13A Ta
Input Capacitance (Ciss) (Max) @ Vds 1180pF @ 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Rds On (Max) @ Id, Vgs 9m Ω @ 20A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 8.3 ns
Case Connection DRAIN
Power Dissipation 2.7W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.7W Ta 28W Tc
Number of Channels 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code S-PDSO-F5
Terminal Form FLAT
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2013
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 17 Weeks

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