Avalanche Energy Rating (Eas) 42 mJ
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0066Ohm
Drain Current-Max (Abs) (ID) 55A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 16A
Turn-Off Delay Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Ta
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 25V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Rds On (Max) @ Id, Vgs 6.6m Ω @ 20A, 10V
Transistor Application SWITCHING
Turn On Delay Time 9.2 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.7W Ta 33W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ