IRFHM8326TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 25A PQFN
PDF
/
Buying Options
Total Price: USD $0.81
Unit Price: USD $0.8056
≥1 USD $0.8056
≥10 USD $0.6612
≥100 USD $0.6403
≥500 USD $0.62035
≥1000 USD $0.59945
Inventory: 37510
Minimum: 1
-
+
Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Technical
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0067Ohm
Drain Current-Max (Abs) (ID) 70A
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1.7V
Continuous Drain Current (ID) 19A
Turn-Off Delay Time 18 ns
Fall Time (Typ) 12 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 35 ns
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Current - Continuous Drain (Id) @ 25°C 19A Ta
Input Capacitance (Ciss) (Max) @ Vds 2496pF @ 10V
Vgs(th) (Max) @ Id 2.2V @ 50μA
Rds On (Max) @ Id, Vgs 4.7m Ω @ 20A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 12 ns
Case Connection DRAIN
Power Dissipation 2.8W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.8W Ta 37W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code S-PDSO-F5
Terminal Form FLAT
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HEXFET?
Published 2013
Packaging Cut Tape (CT)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
Recommended For You
IRFHM8326TRPBF+price,IRFHM8326TRPBF+datasheet,IRFHM8326TRPBF+in stock,buy+IRFHM8326TRPBF,finder+IRFHM8326TRPBF,IRFHM8326TRPBF+tutorials,IRFHM8326TRPBF+download