IRFHM831TR2PBF
RoHS
/
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 14A PQFN
PDF
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Buying Options
Total Price: USD $4.13
Unit Price: USD $4.12965
≥1 USD $4.12965
≥10 USD $3.38865
≥100 USD $3.28225
≥500 USD $3.1768
≥1000 USD $3.0704
Inventory: 1174
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 3.3mm
Length 3.2766mm
Height 990.6μm
Technical
Nominal Vgs 1.8 V
Recovery Time 22 ns
Avalanche Energy Rating (Eas) 50 mJ
Pulsed Drain Current-Max (IDM) 96A
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 6.2 ns
Fall Time (Typ) 4.7 ns
Rise Time 12ns
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Ta 40A Tc
Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 25V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Rds On (Max) @ Id, Vgs 7.8m Ω @ 12A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 6.9 ns
Case Connection DRAIN
Power Dissipation 2.5W
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code S-PDSO-N5
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Max Power Dissipation 2.5W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2013
Packaging Cut Tape (CT)
Physical
Number of Pins 8
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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