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IRFHM830TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-VQFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 21A PQFN
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Buying Options
Total Price: USD $0.79
Unit Price: USD $0.792
≥1 USD $0.792
≥10 USD $0.64592
≥100 USD $0.50248
≥500 USD $0.425885
≥1000 USD $0.346931
≥3000 USD $0.326603
Inventory: 1117
Minimum: 1
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Technical Details

Technical

Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.7W Ta 37W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.7W
Case Connection DRAIN
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Resistance 6MOhm
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series HEXFET?
Published 2010
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Nominal Vgs 1.8 V
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 40A
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1.8V
Continuous Drain Current (ID) 21A
Turn-Off Delay Time 13 ns
Fall Time (Typ) 9.2 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 25 ns
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Current - Continuous Drain (Id) @ 25°C 21A Ta 40A Tc
Input Capacitance (Ciss) (Max) @ Vds 2155pF @ 25V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Rds On (Max) @ Id, Vgs 3.8m Ω @ 20A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 12 ns

Physical

Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-VQFN Exposed Pad
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 12 Weeks

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 3.3mm
Length 3.3mm
Height 1mm

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