Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.7W Ta 37W Tc
Operating Mode ENHANCEMENT MODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 40A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 21A
Turn-Off Delay Time 13 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Current - Continuous Drain (Id) @ 25°C 21A Ta 40A Tc
Input Capacitance (Ciss) (Max) @ Vds 2155pF @ 25V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Rds On (Max) @ Id, Vgs 3.8m Ω @ 20A, 10V
Transistor Application SWITCHING