IRFHM830TR2PBF
RoHS
/
Package 8-VQFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 21A PQFN
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 3.3mm
Length 3.2766mm
Height 990.6μm
Technical
Nominal Vgs 1.8 V
Recovery Time 26 ns
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1.8V
Continuous Drain Current (ID) 21A
Turn-Off Delay Time 13 ns
Fall Time (Typ) 9.2 ns
Rise Time 25ns
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Current - Continuous Drain (Id) @ 25°C 21A Ta 40A Tc
Input Capacitance (Ciss) (Max) @ Vds 2155pF @ 25V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Rds On (Max) @ Id, Vgs 3.8m Ω @ 20A, 10V
FET Type N-Channel
Turn On Delay Time 12 ns
Power Dissipation 37W
Number of Elements 1
Technology MOSFET (Metal Oxide)
Max Power Dissipation 2.7W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2005
Packaging Cut Tape (CT)
Physical
Number of Pins 8
Package / Case 8-VQFN Exposed Pad
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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