IRFHM830DTRPBF
RoHS
/
Package 8-VQFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 20A PQFN
PDF
/
Buying Options
Total Price: USD $0.72
Unit Price: USD $0.71915
≥1 USD $0.71915
≥10 USD $0.58995
≥100 USD $0.5719
≥500 USD $0.55385
≥1000 USD $0.53485
Inventory: 1197
Minimum: 1
-
+
Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 3.3mm
Length 3.2766mm
Height 990.6μm
Technical
Nominal Vgs 1.8 V
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 40A
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1.8V
Continuous Drain Current (ID) 20A
Turn-Off Delay Time 9.1 ns
Fall Time (Typ) 6.7 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 20 ns
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Ta 40A Tc
Input Capacitance (Ciss) (Max) @ Vds 1797pF @ 25V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Rds On (Max) @ Id, Vgs 4.3m Ω @ 20A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 9.8 ns
Case Connection DRAIN
Power Dissipation 2.8W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.8W Ta 37W Tc
Number of Elements 1
JESD-30 Code S-PDSO-N5
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Resistance 7.1MOhm
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2010
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-VQFN Exposed Pad
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 14 Weeks
Alternative Model
Recommended For You
IRFHM830DTRPBF+price,IRFHM830DTRPBF+datasheet,IRFHM830DTRPBF+in stock,buy+IRFHM830DTRPBF,finder+IRFHM830DTRPBF,IRFHM830DTRPBF+tutorials,IRFHM830DTRPBF+download