IRFHM8228TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 19A 8PQFN
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Buying Options
Total Price: USD $3.58
Unit Price: USD $3.5777
≥1 USD $3.5777
≥10 USD $2.9355
≥100 USD $2.84335
≥500 USD $2.75215
≥1000 USD $2.66
Inventory: 1147
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 4.2mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.8W Ta 34W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1667pF @ 10V
Current - Continuous Drain (Id) @ 25°C 19A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 22 ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.2 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 19A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 65A
Pulsed Drain Current-Max (IDM) 260A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 50 mJ
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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