IRFHM4231TRPBF
RoHS
/
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 40A PQFN
PDF
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Buying Options
Total Price: USD $0.4
Unit Price: USD $0.399
≥1 USD $0.399
≥10 USD $0.32775
≥100 USD $0.3173
≥500 USD $0.30685
≥1000 USD $0.29735
Inventory: 38197
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5mm
Length 3.3mm
Height 900μm
Technical
Avalanche Energy Rating (Eas) 42 mJ
DS Breakdown Voltage-Min 25V
Drain-source On Resistance-Max 0.0046Ohm
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1.6V
Continuous Drain Current (ID) 22A
Turn-Off Delay Time 12 ns
Fall Time (Typ) 5.9 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 25V
Rise Time 28 ns
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Input Capacitance (Ciss) (Max) @ Vds 1270pF @ 13V
Vgs(th) (Max) @ Id 2.1V @ 35μA
Rds On (Max) @ Id, Vgs 3.4m Ω @ 30A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 8.7 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.7W Ta 29W Tc
Number of Elements 1
JESD-30 Code S-PDSO-N5
Base Part Number IRFHM4231
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2013
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin
Supply Chain
Factory Lead Time 13 Weeks
Alternative Model
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