IRFHM4226TRPBF
RoHS
/
Package 8-TQFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N CH 25V 28A PQFN
PDF
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Buying Options
Total Price: USD $1.12
Unit Price: USD $1.12005
≥1 USD $1.12005
≥10 USD $0.9196
≥100 USD $0.89015
≥500 USD $0.86165
≥1000 USD $0.83315
Inventory: 359
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 3.3mm
Length 3.3mm
Height 900μm
Technical
Pulsed Drain Current-Max (IDM) 420A
Drain Current-Max (Abs) (ID) 40A
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1.6V
Continuous Drain Current (ID) 28A
Turn-Off Delay Time 14 ns
Fall Time (Typ) 8.1 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 25V
Rise Time 35 ns
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Current - Continuous Drain (Id) @ 25°C 28A Ta
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 13V
Vgs(th) (Max) @ Id 2.1V @ 50μA
Rds On (Max) @ Id, Vgs 2.2m Ω @ 30A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 11 ns
Case Connection DRAIN
Power Dissipation 2.7W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.7W Ta 39W Tc
Number of Elements 1
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Resistance 2.2MOhm
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2013
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 5
Package / Case 8-TQFN Exposed Pad
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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