IRFH8337TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 12A 5X6 PQFN
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Buying Options
Total Price: USD $0.33
Unit Price: USD $0.3325
≥1 USD $0.3325
≥10 USD $0.27265
≥100 USD $0.2641
≥500 USD $0.25555
≥1000 USD $0.247
Inventory: 21126
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.2W Ta 27W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.2W
Case Connection DRAIN
Turn On Delay Time 6.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.8m Ω @ 16.2A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.1 ns
Turn-Off Delay Time 5.7 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 65A
Nominal Vgs 1.8 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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