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IRFH8337TR2PBF

Infineon Technologies
RoHS
/
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 9.7A 5X6 PQFN
PDF
/
Buying Options
Total Price: USD $2.59
Unit Price: USD $2.5916
≥1 USD $2.5916
≥10 USD $2.12705
≥100 USD $2.06055
≥500 USD $1.99405
≥1000 USD $1.92755
Inventory: 1191
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 5mm
Length 5.85mm
Height 1.17mm

Technical

Nominal Vgs 1.8 V
Rds On Max 12.8 mΩ
Drain to Source Resistance 12.8mOhm
Recovery Time 18 ns
Input Capacitance 790pF
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1.8V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 5.7 ns
Fall Time (Typ) 4.1 ns
Drain to Source Voltage (Vdss) 30V
Rise Time 12ns
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Ta 35A Tc
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Rds On (Max) @ Id, Vgs 12.8mOhm @ 16.2A, 10V
FET Type N-Channel
Turn On Delay Time 6.4 ns
Power Dissipation 3.2W
Element Configuration Single
Number of Elements 1
Technology MOSFET (Metal Oxide)
Max Power Dissipation 3.2W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Resistance 12.8MOhm
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Series HEXFET?
Published 2012
Packaging Cut Tape (CT)

Physical

Supplier Device Package PQFN (5x6)
Number of Pins 8
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount

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