Drain to Source Resistance 12.8mOhm
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 5.7 ns
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Ta 35A Tc
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Rds On (Max) @ Id, Vgs 12.8mOhm @ 16.2A, 10V
Turn On Delay Time 6.4 ns
Element Configuration Single
Technology MOSFET (Metal Oxide)
Max Power Dissipation 3.2W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 3 (168 Hours)